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AG-Suter
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Research Interests
Silicon-Carbide
atom is tetragonally surrounded by four carbon atoms. We are focusing on the vacancy centers in the 6H-SiC polytype, where three inequivalent Si vacancies exist. The so-called V1 and V3 vacancies are located [...] Dortmund Relevant Publications: [1] Experimental characterization of spin-3/2 silicon vacancy centers in 6 H -SiC H. Singh, A. N. Anisimov, S. S. Nagalyuk, E. N. Mokhov, P. G. Baranov and D. Suter Phys. Rev [...] Rev. B 101, 134110 (2020) [2] Optical spin initialization of spin-3/2 silicon vacancy centers in 6H SiC at room temperature H. Singh, A. N. Anisimov, I. D. Breev, P. G. Baranov and D. Suter Phys. Rev. B 103 …
